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RJK0365DPA

Renesas Technology
Part Number RJK0365DPA
Manufacturer Renesas Technology
Description Silicon N Channel Power MOS FET Power Switching
Published Feb 15, 2009
Detailed Description www.DataSheet4U.com RJK0365DPA Silicon N Channel Power MOS FET Power Switching REJ03G1655-0300 Rev.3.00 Aug 05, 2008 F...
Datasheet PDF File RJK0365DPA PDF File

RJK0365DPA
RJK0365DPA

Overview
www.
DataSheet4U.
com RJK0365DPA Silicon N Channel Power MOS FET Power Switching REJ03G1655-0300 Rev.
3.
00 Aug 05, 2008 Features High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.
0 mΩ typ.
(at VGS = 10 V) • Pb-free • • • • • Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Note3 Pch θch-c Note3 Tch Tstg Ratings 30 ±20 30 120 30 12 14.
4 30 4.
17 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C REJ03G1655-0300 Rev.
3.
00 Aug 05, 2008 Page 1 of 6 RJK0365DPA Electrical Characteristics www.
DataSheet4U.
com (Ta = 25°C) Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.
2 — — — — — — — — — — — — — — — — Typ — — — — 7.
0 9.
6 60 1180 230 80 0.
8 7.
6 3.
0 1.
7 5.
4 4.
0 34 4.
3 0.
87 20 Max — ± 0.
1 1 2.
5 9.
1 13.
4 — — — — — — — — — — — — 1.
13 — Unit V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 4.
5 V Note4 ID = 15 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.
5 V ID = 30 A VGS = 10 V, ID = 15 A VDD ≅ 10 V RL = 0.
66 Ω Rg = 4.
7 Ω IF = 30 A, VGS = 0 Note4 IF =30 A, VGS = 0 diF/ dt = 100 A/ µs Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to so...


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