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RJK0389DPA

Part Number	RJK0389DPA
Manufacturer	Renesas Technology
Description	Silicon N Channel Power MOS FET Power Switching
Published	Feb 15, 2009
Detailed Description	www.DataSheet4U.com RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R...
Datasheet	RJK0389DPA PDF File

Overview

www.
DataSheet4U.
com RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0300 Rev.
3.
00 Dec 03, 2008 Features • • • • • Low on-resistance Capable of 4.
5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package name: WPAK-D2) 2 3 4 D1 D1 D1 9 S1/D2 5 6 7 8 5 6 7 8 1 G1 8 G2 9 4 3 2 1 4 3 2 1 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source S2 S2 S2 5 6 7 (Bottom View) MOS1 MOS2 and Schottky Barrier Diode Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche ...

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RJK0389DPA Silicon N Channel Power MOS FET Power Switching - Renesas Technology

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