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2SB965

SavantIC
Part Number 2SB965
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published Feb 17, 2009
Detailed Description SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB965 DESCRIPTION ·W...
Datasheet PDF File 2SB965 PDF File

2SB965
2SB965

Overview
SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors 2SB965 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1288 APPLICATIONS ·For use in low frequency and power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -7 70 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SB965 SYMBOL TYP.
MAX UNIT V(BR)CEO VCEsat VBEsat ICBO IEBO hFE -1 hFE -2 COB fT Collector-emitter breakdown voltage IC=-25mA ;IB=0 IC=-4A ;IB=-0.
4A IC=-4A ;IB=-0.
4A VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-5V -120 V Collector-emitter saturation voltage -1.
5 V Base-emitter saturation voltage -2.
0 V Collector cut-off current -50 µA Emitter cut-off current -50 µA DC current gain 60 320 DC current gain 20 Output capacitance 150 pF Transition frequency 75 MHz hFE-1 classifications R 60-120 Q 100-200 P 160-320 2 SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB965 Fig.
2 Outline dimensions (unindicated tolerance:±0.
30mm) 3 ...


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