DatasheetsPDF.com

5N20V

Gemos
Part Number 5N20V
Manufacturer Gemos
Description GE5N20V
Published Feb 19, 2009
Detailed Description GEMOS www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR GE5N20V N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The G...
Datasheet PDF File 5N20V PDF File

5N20V
5N20V

Overview
GEMOS www.
DataSheet4U.
com MOS FIELD EFFECT TRANSISTOR GE5N20V N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE5N20V uses advanced trench technology to provide excellent RDS(ON), rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
This device is suitable for use as a Battery protection or in other Switching application.
Schematic diagram GENERAL FEATURES RDS(ON) < 36mΩ @ VGS=2.
7V RDS(ON) < 27.
5mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package ● VDS = 20V,ID = 5A Marking and pin Assignment APPLICATIONS ● Battery protection ● Load switch ● Power man...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)