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IS62WV25616BLL

Part Number	IS62WV25616BLL
Manufacturer	Integrated Silicon Solution
Description	ULTRA LOW POWER CMOS STATIC RAM
Published	Feb 22, 2009
Detailed Description	IS62WV25616ALL IS62WV25616BLL www.DataSheet4U.com 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM ISSI MAY 2005...
Datasheet	IS62WV25616BLL PDF File

Overview

IS62WV25616ALL IS62WV25616BLL www.
DataSheet4U.
com 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM ISSI MAY 2005 ® FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.
65V--2.
2V VDD (IS62WV25616ALL) 2.
5V--3.
6V VDD (IS62WV25616BLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available DESCRIPTION The ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed, low power, 4M bit SRAMs organized as 256K words by 16 bits.
It is fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS1 is LOW and both LB and UB are HIGH, the device assumes a standby mode at which th...

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IS62WV25616BLL ULTRA LOW POWER CMOS STATIC RAM - Integrated Silicon Solution

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