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CMMT591

CDIL
Part Number CMMT591
Manufacturer CDIL
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Published Feb 28, 2009
Detailed Description Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company www.DataSheet4U.com SOT-23 F...
Datasheet PDF File CMMT591 PDF File

CMMT591
CMMT591

Overview
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company www.
DataSheet4U.
com SOT-23 Formed SMD Package CMMT591 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor Marking CMMT = 591 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current Peak Pulse current Base current Total power dissipation at Tamb = 25°C Junction temperature D.
C.
current gain –IC = 500 mA; VCE = 5 V Transition frequency at f = 100 MHz IC = 50 mA; VCE = 10 V VCBO VCEO VEBO IC ICM IB Ptot Tj hFE max.
max.
max.
max.
max.
max.
max.
max.
min.
max.
min.
80 60 5 1 2 200 500 150 100 300 150 MHz V V V A A mA mW °C fT Continental Device India Limited Data Sheet Page 1 of 3 www.
DataSheet4U.
com CMMT591 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current Peak Pulse current Base current Total power dissipation at Tamb = 25°C Storage temperature Junction temperature VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj max.
max.
max.
max.
max.
max.
max.
-55 to max.
80 60 5 1 2 200 500 +150 150 V V V A A mA mW °C °C CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector cut-off current IE = 0; VCB = 60 V ICBO VBE = 0; VCE = 60 V ICES Emitter cut-off current VEB = 4 V; IC = 0 Breakdown voltages IC = 10 mA; IB = 0 IC = 100 µA; IE = 0 IE = 100 µA; IC = 0 Base-emitter voltage IC = 1 A; VCE = 5 V Saturation voltage IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA IC = 1 A; IB = 100 mA D.
C.
current gain IC = 1 mA; VCE = 5 V IC = 500 mA; VCE = 5 V* IC = 1 A; VCE = 5 V* IC = 2 A; VCE = 5 V* Collector capacitance at f = 1 MHz IE = 0; VCB = 10 V Transition frequency at f = 100 MHz IC = 50 mA; VCE = 10 V C ob fT IEBO VCEO VCBO VE...


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