DatasheetsPDF.com

BLF578

NXP Semiconductors
Part Number BLF578
Manufacturer NXP Semiconductors
Description Power LDMOS transistor
Published Mar 2, 2009
Detailed Description www.DataSheet4U.com BLF578 Power LDMOS transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1....
Datasheet PDF File BLF578 PDF File

BLF578
BLF578

Overview
www.
DataSheet4U.
com BLF578 Power LDMOS transistor Rev.
01 — 11 December 2008 Objective data sheet 1.
Product profile 1.
1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Table 1.
Production test information f (MHz) pulsed RF 225 VDS (V) 50 PL (W) 1200 Gp (dB) 24 ηD (%) 70 Mode of operation CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features I Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 µs with δ of 20 %: N Output power = 1200 W N Power gain = 24 dB N Efficiency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (10 MHz to 500 MHz) I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications I...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)