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FDB150N10

Fairchild Semiconductor
Part Number FDB150N10
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 3, 2009
Detailed Description FDB150N10 — N-Channel PowerTrench® MOSFET FDB150N10 N-Channel PowerTrench® MOSFET 100 V, 57 A, 15 mΩ December 2013 Fe...
Datasheet PDF File FDB150N10 PDF File

FDB150N10
FDB150N10


Overview
FDB150N10 — N-Channel PowerTrench® MOSFET FDB150N10 N-Channel PowerTrench® MOSFET 100 V, 57 A, 15 mΩ December 2013 Features • RDS(on) = 12 mΩ (Typ.
) @ VGS = 10 V, ID = 49 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter D D G S D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (1 in2 Pad of 2-oz Copper), Max.
FDB150N10 100 ±20 57 40 228 132 7.
5 110 0.
88 -55 to +150 300 FDB150N10 1.
13 62.
5 40 Unit V V A A A mJ V/ns W W/oC oC oC Unit oC/W ©2008 Fairchild Semiconductor Corporation 1 FDB150N10 Rev.
C2 www.
fairchildsemi.
com FDB150N10 — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Part Number FDB150N10 Top Mark FDB150N10 Package D2-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 24 mm Electrical Characteristics TC = 25oC unless otherwise not...



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