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RMWB11001

Part Number	RMWB11001
Manufacturer	Fairchild Semiconductor
Description	11 GHZ Buffer Amp
Published	Mar 15, 2009
Detailed Description	RMWB11001 www.DataSheet4U.com June 2004 RMWB11001 11 GHz Buffer Amplifier MMIC General Description The RMWB11001 is a...
Datasheet	RMWB11001 PDF File

Overview

RMWB11001 www.
DataSheet4U.
com June 2004 RMWB11001 11 GHz Buffer Amplifier MMIC General Description The RMWB11001 is a 2-stage GaAs MMIC amplifier designed as a 10.
5 to 11.
7 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications.
In conjunction with other Fairchild RF amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset.
The RMWB11001 utilizes our 0.
25µm power PHEMT process and is sufficiently versatile to serve in a variety of medium power amplifier applications.
Features • • • • • 4 mil substrate Small-signal gain 21dB (typ.
) Saturated Power Out 19dBm (typ.
) Voltage Detector Included to Monitor Pout Chip size 2.
0mm x 1.
3mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneous (Vd–Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 8 104 +8 -30 to +85 -55 to +125 180 Units V V V mA dBm °C °C °C/W ©2004 Fairchild Semiconductor Corporation RMWB11001 Rev.
C RMWB11001 Electrical www.
DataSheet4U.
com Characteristics (At 25°C), 50Ω system, Vd = +4V, Quiescent Current (Idq) = 36mA Min 10.
5 18 17 Typ -0.
5 21 0.
5 19 55 35 13 18 4 0.
5 Max 11.
7 Units GHz V dB dB dBm mA % dB dB dB V Parameter Frequency Range Gate Supply Voltage1 (Vg) Gain Small Signal (Pin = -10dBm) Gain Variation vs.
Frequency Power Output Saturated: (Pin = 2dBm) Drain Current at Psat (Pin = 2dBm) Power Added Efﬁciency (PAE): at Psat Input Return Loss (Pin = -10dBm) Output Return Loss (Pin = -10dBm) Noise Figure Detector Voltage (Pout = +18dBm) Note: 1: Typical range of gate voltage is -0.
8 to 0.
2V to set typical Idq of 36mA.
Functional Block Diagram1 Drain Supply Drain Supply Vd1 Vd2 MMIC Chip RF IN RF OUT Ground (Back of Chip) Gate Supply Vg Output Power Detector Voltage Vdet Note: 1: Dete...

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RMWB11001 11 GHZ Buffer Amp - Fairchild Semiconductor

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