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RMWP23001

Part Number	RMWP23001
Manufacturer	Fairchild Semiconductor
Description	23 GHZ Power Amp
Published	Mar 15, 2009
Detailed Description	RMWP23001 www.DataSheet4U.com June 2004 RMWP23001 21–24 GHz Power Amplifier MMIC General Description The RMWP23001 is...
Datasheet	RMWP23001 PDF File

Overview

RMWP23001 www.
DataSheet4U.
com June 2004 RMWP23001 21–24 GHz Power Amplifier MMIC General Description The RMWP23001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 24 GHz Power Amplifier for use in point to point and point to multi-point radios, and various communications applications.
In conjunction with other Fairchild Semiconductor amplifiers, multipliers and mixers it forms part of a complete 23 GHz transmit/receive chipset.
The RMWP23001 utilizes our 0.
25µm power PHEMT process and is sufficiently versatile to serve in a variety of power amplifier applications.
Features • 4mil substrate • Small-signal gain 22.
5dB (typ.
) • 1dB compressed Pout 23.
5dBm (typ.
) • Chip size 2.
6mm x 1.
2mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneous (Vd–Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 8 607 +8 -30 to +85 -55 to +125 36.
5 Units V V V mA dBm °C °C °C/W ©2004 Fairchild Semiconductor Corporation RMWP23001 Rev.
C RMWP23001 Electrical www.
DataSheet4U.
com Characteristics (At 25°C), 50Ω system, Vd = +4V, Quiescent Currrent Idq = 400mA Min 21 20 Typ -0.
3 22.
5 1.
0 21.
5 24 25 400 430 410 15 14 12 33 8 Max 24 Units GHz V dB dB dB dBm dBm mA mA mA % dB dB dBm dB Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal at Pin = -8dBm Gain Variation vs.
Frequency Gain at 1dB Compression Power Output at 1dB Compression Power Output Saturated: Pin = +3dBm Drain Current at Pin = -8dBm Drain Current at 1dB Compression Drain Current at Saturated: Pin = +3dBm Power Added Efﬁciency (PAE): at P1dB Input Return Loss (Pin = -8dBm) Output Return Loss (Pin = -8dBm) OIP3 Noise Figure Note: 1.
Typical range of gate voltage is -0.
7 to -0.
05V to set Idq of 400mA.
22 ©2004 Fairchild Semiconductor Corporation RMWP23001 Rev.
C RMWP23001 Application www.
DataShe...

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