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PH3855L

NXP Semiconductors
Part Number PH3855L
Manufacturer NXP Semiconductors
Description N-channel TrenchMOS logic level FET
Published Mar 19, 2009
Detailed Description www.DataSheet4U.com PH3855L N-channel TrenchMOS™ logic level FET Rev. 01 — 26 January 2005 Product data sheet 1. Produ...
Datasheet PDF File PH3855L PDF File

PH3855L
PH3855L

Overview
www.
DataSheet4U.
com PH3855L N-channel TrenchMOS™ logic level FET Rev.
01 — 26 January 2005 Product data sheet 1.
Product profile 1.
1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.
1.
2 Features s Logic level threshold s Surface mounted package.
1.
3 Applications s DC-to-DC converters s Motors, lamps, solenoids s General purpose power switching s 12 V and 24 V loads.
1.
4 Quick reference data s VDS ≤ 55 V s RDSon ≤ 36 mΩ s ID ≤ 24 A s Qgd = 5.
5 nC (typ).
2.
Pinning information Table 1: Pin 1, 2, 3 4 mb Pinning Description source gate mounting base; connected to drain mb Simplified outline Symbol D G mbb076 S 1 2 3 4 Top view SOT669 (LFPAK) Philips Semiconductors w w w .
D a t a S h e e t 4 U .
c o m PH3855L N-channel TrenchMOS™ logic level FET 3.
Ordering information Table 2: Ordering information Package Name PH3855L LFPAK Description plastic single-ended surface mounted package; 4 leads Version SOT669 Type number 4.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 30 A; tp = 0.
04 ms; VDD ≤ 55 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ Min −55 −55 Max 55 55 ±15 24 17.
2 45 50 +175 +175 24 45 40 Unit V V V A A A W °C °C A A mJ Source-drain diode Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 9397 ...


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