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STGW100N30

STMicroelectronics
Part Number STGW100N30
Manufacturer STMicroelectronics
Description Fast IGBT
Published Mar 20, 2009
Detailed Description www.DataSheet4U.com STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT Features ■ ■ ■ ■ ■ Optimized for susta...
Datasheet PDF File STGW100N30 PDF File

STGW100N30
STGW100N30

Overview
www.
DataSheet4U.
com STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT Features ■ ■ ■ ■ ■ Optimized for sustain and energy recovery circuits in PDP applications.
State-of-the-art STripFET™ technology Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency High repetitive peak current capability 3 1 2 3 1 2 2 1 3 TO-220FP TO-247 Description Advanced high-density and high-current IGBT technology with low-drop companion diode adapted to various functions in PDP sets.
TO-220 Figure 1.
Internal schematic diagram Table 1.
Device summary Marking GF100N30 GP100N30 GW100N30 Package TO-220FP TO-220 TO-247 Packaging Tube Tube Tube Order codes STGF100N30 STGP100N30 STGW100N30 February 2009 Rev 1 1/13 www.
st.
com 13 Contents www.
DataSheet4U.
com STGF100N30, STGP100N30, STGW100N30 Contents 1 2 Electrical ratings .
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3 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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5 3 4 5 Test circuits .
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7 Package mechanical data .
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8 Revision history .
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12 2/13 STGF100N30, STGP100N30, STGW100N30 www.
DataSheet4U.
com Electrical ratings 1 Electrical ratings Absolute maximum ratings Value Symbol VCES IC (1) IC (1) ICL(2) IRP VGE ESD (HBM) Parameter TO-220 Collector-emitter voltage (VGE = 0) Collector current (continuous) at TC = 25 °C Collector current (continuous) at TC = 100 °C Turn-off latching current Repetitive peak current at TC = 25 °C Gate-emitter voltage (continuous) Electrostatic sensitive discharge, human body model...


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