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SPB80N04S2L-03

Infineon Technologies
Part Number SPB80N04S2L-03
Manufacturer Infineon Technologies
Description Power-Transistor
Published Mar 27, 2009
Detailed Description www.DataSheet4U.com Preliminary data SPP80N04S2L-03 SPB80N04S2L-03 Feature OptiMOS =Power-Transistor Product Summar...
Datasheet PDF File SPB80N04S2L-03 PDF File

SPB80N04S2L-03
SPB80N04S2L-03

Overview
www.
DataSheet4U.
com Preliminary data SPP80N04S2L-03 SPB80N04S2L-03 Feature OptiMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO263-3-2 max.
SMD version • N-Channel • Enhancement mode • Logic Level •=175°C operating temperature • Avalanche rated • dv/dt rated 40 3.
1 80 P-TO220-3-1 V mΩ A Type SPP80N04S2L-03 SPB80N04S2L-03 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4261 Q67040-S4262 Marking 2N04L03 2N04L03 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol ID Value Unit Continuous drain current TC = 25 °C, 1) TC=100°C A 80 80 Pulsed drain current TC=25°C ID puls EAS EAR 320 810 30 6 ±20 300 -55.
.
.
+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID =80 A , VDD=25V, RGS =25Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =80A, VDS=32V, di/dt=200A/µs, Tjmax =175°C dv/dt VGS Ptot Tj , Tstg Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2001-06-25 www.
DataSheet4U.
com Preliminary data SPP80N04S2L-03 SPB80N04S2L-03 Values min.
typ.
max.
Unit Thermal Characteristics Parameter Characteristics Symbol Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm 2 cooling area 2) RthJC RthJA RthJA - - 0.
5 62 62 40 K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Symbol min.
Values typ.
max.
Unit Drain-source breakdown voltage VGS =0V, ID =1mA V(BR)DSS VGS(th) IDSS 40 1.
2 1.
6 2 V Gate threshold voltage, VGS = VDS ID =250µA Zero gate voltage drain current VDS =40V, VGS =0V, Tj=25°C VDS =40V, VGS =0V, Tj=125°C µA 0.
01 1 1 1 100 100 nA mΩ 3.
5 3.
2 2.
7 2.
4 4.
5 4.
2 3.
4 3.
1 Gate-source leakage current VGS =20V, VDS=0V IGSS RDS(on) - Drain-source on-state resistance VGS =4.
5V, ID =80A VGS =4.
5V, ID =80A, SMD version Drain-source on-state resistance3) VGS =10...


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