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SPP80N06S2-05

Infineon Technologies
Part Number SPP80N06S2-05
Manufacturer Infineon Technologies
Description Power-Transistor
Published Mar 27, 2009
Detailed Description www.DataSheet4U.com SPP80N06S2-05 SPB80N06S2-05 Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 OptiMOS®...
Datasheet PDF File SPP80N06S2-05 PDF File

SPP80N06S2-05
SPP80N06S2-05

Overview
www.
DataSheet4U.
com SPP80N06S2-05 SPB80N06S2-05 Product Summary VDS RDS(on) max.
SMD version ID P- TO263 -3-2 OptiMOS® Power-Transistor Feature • N-Channel 55 4.
8 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N06S2-05 SPB80N06S2-05 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67040-S4245 Q67040-S4255 Marking 2N0605 2N0605 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 810 30 6 ±20 300 -55.
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+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25 Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-04-24 www.
Data...


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