DatasheetsPDF.com

SPI80N06S2L-05

Infineon Technologies
Part Number SPI80N06S2L-05
Manufacturer Infineon Technologies
Description Power-Transistor
Published Mar 27, 2009
Detailed Description www.DataSheet4U.com SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS® Power-Transistor Feature • N-Channel Produc...
Datasheet PDF File SPI80N06S2L-05 PDF File

SPI80N06S2L-05
SPI80N06S2L-05

Overview
www.
DataSheet4U.
com SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max.
SMD version ID P- TO262 -3-1 P- TO263 -3-2 55 4.
5 80 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • Avalanche rated • dv/dt rated Type SPP80N06S2L-05 SPB80N06S2L-05 SPI80N06S2L-05 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67040-S4246 Q67040-S4256 Q67060-S7422 Marking 2N06L05 2N06L05 2N06L05 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 800 30 6 ±20 300 -55.
.
.
+175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temp...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)