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SPP80N06S2L-09

Infineon Technologies
Part Number SPP80N06S2L-09
Manufacturer Infineon Technologies
Description Power-Transistor
Published Mar 27, 2009
Detailed Description www.DataSheet4U.com SPP80N06S2L-09 SPB80N06S2L-09 Product Summary VDS R DS(on) ID P- TO263 -3-2 OptiMOS® Power-Transis...
Datasheet PDF File SPP80N06S2L-09 PDF File

SPP80N06S2L-09
SPP80N06S2L-09

Overview
www.
DataSheet4U.
com SPP80N06S2L-09 SPB80N06S2L-09 Product Summary VDS R DS(on) ID P- TO263 -3-2 OptiMOS® Power-Transistor Feature • N-Channel 55 8.
5 80 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N06S2L-09 SPB80N06S2L-09 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6031 Q67060-S6032 Marking 2N06L09 2N06L09 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 73 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 370 19 6 ±20 190 -55.
.
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+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 ww...


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