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SPP80N08S2-07

Infineon Technologies
Part Number SPP80N08S2-07
Manufacturer Infineon Technologies
Description Power-Transistor
Published Mar 27, 2009
Detailed Description www.DataSheet4U.com SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS® Power-Transistor Feature • N-Channel Product S...
Datasheet PDF File SPP80N08S2-07 PDF File

SPP80N08S2-07
SPP80N08S2-07

Overview
www.
DataSheet4U.
com SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max.
SMD version ID P- TO262 -3-1 P- TO263 -3-2 75 7.
1 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N08S2-07 SPB80N08S2-07 SPI80N08S2-07 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67040-S4263 Q67040-S4264 Q67060-S6082 Marking 2N0807 2N0807 2N0807 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 810 30 6 ±20 300 -55.
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+175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=60V, di/dt=200A/µs, T jmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and stora...


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