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IXFP10N60P

IXYS Corporation
Part Number IXFP10N60P
Manufacturer IXYS Corporation
Description Polar MOSFETs
Published Apr 5, 2009
Detailed Description Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche ...
Datasheet PDF File IXFP10N60P PDF File

IXFP10N60P
IXFP10N60P

Overview
Advance Technical Information www.
DataSheet4U.
com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 10N60P IXFP 10N60P VDSS = 600 V ID25 = 10 A RDS(on) ≤ 740 mΩ ≤ 250 ns trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 10 25 10 18 500 10 200 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C TO-220 (IXFP) G D S (TAB) T...


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