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IRFU6215

International Rectifier
Part Number IRFU6215
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 15, 2009
Detailed Description www.datasheet4u.com PD - 91749 PRELIMINARY P-Channel l 175°C Operating Temperature l Surface Mount (IRFR6215) l Straigh...
Datasheet PDF File IRFU6215 PDF File

IRFU6215
IRFU6215


Overview
www.
datasheet4u.
com PD - 91749 PRELIMINARY P-Channel l 175°C Operating Temperature l Surface Mount (IRFR6215) l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l IRFR/U6215 HEXFET® Power MOSFET D VDSS = -150V RDS(on) = 0.
295Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for throughhole mounting applications.
Power dissipation levels up to 1.
5 watts are possible in typical surface mount applications.
D -P A K T O -252 A A I-P A K T O -25 1A A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current † Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚† Avalanche Current† Repetitive Avalanche Energy† Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
-13 -9.
0 -44 110 0.
71 ± 20 310 -6.
6 11 5.
0 -55 to + 175 300 (1.
6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount) ** Junction-to-Ambient Typ.
––– ––– ––– Max.
1.
4 50 110 Units °C/W www.
irf.
com 1 5/11/98 www.
datasheet4u.
com IRFR/U6215 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static...


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