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CMBT8598

CDIL
Part Number CMBT8598
Manufacturer CDIL
Description (CMBT8598 / CMBT8599) TRANSISTORS
Published Apr 20, 2009
Detailed Description www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 ...
Datasheet PDF File CMBT8598 PDF File

CMBT8598
CMBT8598

Overview
www.
datasheet4u.
com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT8598 CMBT8599 GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking CMBT8598 = 2K CMBT8599 = 2W PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.
c.
) Total power dissipation at Tamb = 25°C D.
C.
current gain –IC = 100 mA; –VCE = 5 V –V CBO –V CEO –V EBO –IC Ptot hFE CMBT 8598 max.
60 max.
60 max.
max.
max.
min.
75 8599 80 V 80 V V mA mW 75 5 500 225 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –V CBO Collector–emitter voltage (open base) –V CEO Emitter–base voltage (open collector) –V EBO Collector current (d.
c.
) –IC max.
max.
max.
max.
60 60 5 500 80 V 80 V V mA Continental Device India Limited Data Sheet Page 1 of 3 www.
datasheet4u.
com CMBT8598 CMBT8599 Total power dissipation at Tamb = 25°C Ptot Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient max Tstg Tj 225 –55 to +150 max.
150 mW °C °C Rth j–a 556 °C/mW CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –V(BR)CEO min.
60 –IC = 1 mA; –IE = 0 Collector–base breakdown voltage –V(BR)CBO min.
60 –IC = 10 mA; –IE = 0 Emitter–base breakdown voltage –V(BR)EBO min.
5 –IE = 10 mA; –IC = 0 Collector cut–off current –I CBO max.
50 –VCB = 20 V; –IE = 0 Emitter cut–off current –I EBO max.
50 –VBE = 3 V; –IC = 0 Output capacitance at f = 100 kHz Cc max.
4.
5 IE = 0; –VCB = 5 V Input capacitance at f = 100 kHz Ce max.
30 IC = 0; –VBE = 0.
5 V Saturation voltages –IC = 100 mA; –IB = 5 mA Base emitter voltage IC = 1 mA; VCE = 5 V; IC = 10 mA; VCE = 5 V D.
C.
curren...


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