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IRHM7250

International Rectifier
Part Number IRHM7250
Manufacturer International Rectifier
Description RADIATION HARDENED POWER MOSFET THRU-HOLE
Published Apr 20, 2009
Detailed Description www.datasheet4u.com PD - 90674C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radia...
Datasheet PDF File IRHM7250 PDF File

IRHM7250
IRHM7250


Overview
www.
datasheet4u.
com PD - 90674C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level IRHM7250 100K Rads (Si) IRHM3250 300K Rads (Si) IRHM4250 IRHM8250 600K Rads (Si) RDS(on) 0.
10 Ω 0.
10 Ω 0.
10 Ω ID 26A 26A 26A 26A IRHM7250 JANSR2N7269 200V, N-CHANNEL REF: MIL-PRF-19500/603 ® ™ RAD Hard HEXFET TECHNOLOGY QPL Part Number JANSR2N7269 JANSF2N7269 JANSG2N7269 JANSH2N7269 1000K Rads (Si) 0.
10 Ω HEXFET® TO-254AA International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current Œ Repetitive Avalanche Energy Œ Peak Diode Recovery dv/dt Ž Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 26 16 104 150 1.
2 ±20 500 26 15 5.
0 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 (0.
063 in.
(1.
6mm) from case for 10s) 9.
3 (Typical) g www.
irf.
com 1 10/11/00 www.
datasheet4u.
com...



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