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IRHM3Z60

Part Number	IRHM3Z60
Manufacturer	International Rectifier
Description	RADIATION HARDENED POWER MOSFET THRU-HOLE
Published	Apr 20, 2009
Detailed Description	www.datasheet4u.com PD - 91701B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radia...
Datasheet	IRHM3Z60 PDF File

Overview

www.
datasheet4u.
com PD - 91701B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level IRHM7Z60 100K Rads (Si) IRHM3Z60 300K Rads (Si) IRHM4Z60 600K Rads (Si) IRHM8Z60 1000K Rads (Si) RDS(on) 0.
014Ω 0.
014Ω 0.
014Ω 0.
014Ω ID 35*A 35*A 35*A 35*A IRHM7Z60 30V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY ™ ® TO-254AA International Rectifier’s RAD-Hard ogy provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
HEXFET® technol- Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page *Current is limited by internal wire diameter 35* 35* 140 250 2.
0 ±20 500 35 25 0.
35 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 ( 0.
063 in.
(1.
6mm) from case for 10s) 9.
3 (Typical ) g www.
irf.
com 1 12/20/01 www.
datasheet4u.
com IRHM7Z60 Pre-Irradiation Electrical Ch...

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IRHM3Z60 RADIATION HARDENED POWER MOSFET THRU-HOLE - International Rectifier

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