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4525GEH

Part Number	4525GEH
Manufacturer	Advanced Power Electronics
Description	AP4525GEH
Published	Apr 30, 2009
Detailed Description	AP4525GEH RoHS-compliant Product Advanced Power www.datasheet4u.com Electronics Corp. ▼ Simple Drive Requirement ▼ Good...
Datasheet	4525GEH PDF File

Overview

AP4525GEH RoHS-compliant Product Advanced Power www.
datasheet4u.
com Electronics Corp.
▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance S1 G1 D1/D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID 40V 28mΩ 15A -40V 42mΩ -12A S2 G2 P-CH BVDSS TO-252-4L RDS(ON) ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating N-channel 40 ±16 15.
0 12.
0 50 10.
4 0.
083 -55 to 150 -55 to 150 P-channel -40 ±16 -12.
0 -10.
0 -50 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 12 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 1 200809235 AP4525GEH N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) www.
datasheet4u.
com o Symbol Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min.
40 1 - Typ.
0.
03 6 9 1.
5 4 7 20 20 4 580 100 70 2 Max.
Units 28 32 3 1 25 ±30 14 930 3 V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω BVDSS ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A VGS=4.
5V, ID=4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=40V, VGS=0V VGS=±16V ID=6A VDS=20V VGS=4.
5V VDS=20V ID=6A RG=3Ω,VGS=10V RD=3.
3Ω VGS=0V VDS=25V f=1.
0...

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