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2SD850

SavantIC
Part Number 2SD850
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published May 3, 2009
Detailed Description SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD850 www.datasheet4u.com DESCRIPTION ·...
Datasheet PDF File 2SD850 PDF File

2SD850
2SD850

Overview
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD850 www.
datasheet4u.
com DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Line-operated horizontal deflection output applications PINNING(see fig.
2) PIN 1 2 3 Base Emitter Collector Fig.
1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=90 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 3 5 25 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.
1A; IB=0 IE=10mA; IC=0 IC=2.
5 A;IB=0.
8A IC=2.
5 A;IB=0.
8A VCB=750V;IE=0 ICBO Collector cut-off current VCB=1500V;IE=0 hFE-1 hFE-2 tf ts DC current gain DC current gain Fall time IC=2.
5A;IBend=0.
8A;LB=5µH Storage time 13 IC=0.
5A ; VCE=5V IC=2.
5A ; VCE=10V 8 4 MIN 600 5 TYP.
www.
datasheet4u.
com 2SD850 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat MAX UNIT V V 4.
0 1.
5 50 1.
0 V V µA mA 15 1.
0 µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.
datasheet4u.
com 2SD850 Fig.
2 Outline dimensions 3 ...


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