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MD1803DFP

STMicroelectronics
Part Number MD1803DFP
Manufacturer STMicroelectronics
Description High voltage NPN Power transistor
Published May 4, 2009
Detailed Description MD1803DFP www.datasheet4u.com High voltage NPN Power transistor for standard definition CRT display Features ■ ■ ■ ■ ■...
Datasheet PDF File MD1803DFP PDF File

MD1803DFP
MD1803DFP

Overview
MD1803DFP www.
datasheet4u.
com High voltage NPN Power transistor for standard definition CRT display Features ■ ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “enhanced generation” Stable performance versus operating temperature variation Low base drive requirement Tight hFE range at operating collector current Fully insulated power package UL compliant Integrated free wheeling diode TO-220FP 1 3 2 Applications ■ Horizontal deflection output for TV Figure 1.
Internal schematic diagram Description The MD1803DFP is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure.
The new MD product series show improved silicon efficiency bringing updated performance to the horizontal deflection stage.
RBE=60Ω typ.
Table 1.
Device summary Marking MD1803DFP Package TO-220FP Packing Tube Order code MD1803DFP May 2008 Rev 1 1/10 www.
st.
com 10 Electrical ratings MD1803DFP 1 Electrical ratings Table 2.
Absolute maximum rating Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Total dissipation at Tc = 25°C Insulation withstand voltage (rms) from all three leads to external heatsink Storage temperature Max.
operating junction temperature Value 1500 700 10 10 15 5 40 1500 -65 to 150 150 Unit V V V A A A W V °C °C www.
datasheet4u.
com Symbol VCES VCEO VEBO IC ICM IB PTOT Visol Tstg TJ Table 3.
Symbol Thermal data Parameter Value 3.
125 Unit °C/W Rthj-case Thermal resistance junction-case ___________ ____max 2/10 MD1803DFP Electrical characteristics 2 www.
datasheet4u.
com Electrical characteristics (TCASE = 25°C; unless otherwise specified) Table 4.
Symbol ICES IEBO V(BR)EBO VCE(sat)(1) Electrical characteristics Parameter Collector cut-off current (VBE = 0) Emitter cut-off current (IC = 0) Test conditions VCE = 1500 V VCE = 1500 V VEB = 5 V Min.
Typ.
Max.
0.
2 2 40 10 IB = 1...


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