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BD743A

SavantIC
Part Number BD743A
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published May 9, 2009
Detailed Description SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datas...
Datasheet PDF File BD743A PDF File

BD743A
BD743A


Overview
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.
datasheet4u.
com ·Complement to type BD744/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD743/A/B/C Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD743 VCBO Collector-base voltage BD743A BD743B BD743C BD743 VCEO Collector-emitter voltage BD743A BD743B BD743C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE 50 70 90 110 45 60 80 100 5 15 20 5 90 2 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD743 Collector-emitter breakdown voltage BD743A IC=30mA; IB=0 BD743B BD743C VCEsat-1 VCEsat-2 VBE -1 VBE -2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage BD743/A ICEO Collector cut-off current BD743B/C BD743 BD743A ICBO Collector cut-off current BD743B BD743C IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current DC current gain DC current gain DC current gain VCE=60V; IB=0 VCE=50V; VBE=0 TC=125 VCE=70V; VBE=0 TC=125 VCE=90V; VBE=0 TC=125 VCE=110V; VBE=0 TC=125 VEB=5V; IC=0 IC=1A ; VCE=4V IC=5A ; VCE=4V IC=15A ; VCE=4V 40 20 5 IC=5 A;IB=0.
5 A IC=15 A;IB=5 A IC=5A ; VCE=4V IC=15A ; VCE=4V VCE=30V; IB=0 80 100 CONDITIONS MIN 45 60 www.
datasheet4u.
com BD743/A/B/C SYMBOL TYP.
MAX UNIT V(BR)CEO V 1.
0 3.
0 1.
0 3.
0 V V V V 0.
1 0.
1 5.
0 0.
1 5.
0 0.
1 5.
0 0.
1 5.
0 0.
5 mA mA mA 150 Switching times resistive load td tr ts tf Delay time Rise time Storage time Fall time IC=5 A;IB1=-IB2=0.
5 A VBE(off)=-4.
2V; RL=6@ tp=20µs 0.
02 0.
35 0.
5 0.
4 ...


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