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BUS12

Part Number	BUS12
Manufacturer	SavantIC
Description	SILICON POWER TRANSISTOR
Published	May 20, 2009
Detailed Description	SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUS12 www.datasheet4u.com DESCRIPTION ·W...
Datasheet	BUS12 PDF File

Overview

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUS12 www.
datasheet4u.
com DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications PINNING(see fig.
2) PIN 1 2 3 Base Emitter Collector Fig.
1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 850 400 10 8 125 200 -65~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.
17 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.
1A; L=25mH IE=10m A;IC=0 IC=5 A;IB=1 A IC=8 A;IB=2.
5 A IC=5 A;IB=1 A IC=8 A;IB=2.
5 A VCE=850V;VBE=0 TC=125 VEB=10V; IC=0 IC=1A ; VCE=5V 15 MIN 400 10 www.
datasheet4u.
com BUS12 SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICES IEBO hFE TYP.
MAX UNIT V 1.
5 3.
0 1.
4 1.
8 1.
0 3.
0 1.
0 V V V V mA mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.
datasheet4u.
com BUS12 Fig.
2 Outline dimensions 3 ...

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