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SMCTTA32N14A10

Part Number	SMCTTA32N14A10
Manufacturer	Solidtron
Description	Advanced Pulse Power Device N-MOS VCS
Published	May 22, 2009
Detailed Description	SMCT TA32N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description This voltage controlled Solidtron (VCS) dis...
Datasheet	SMCTTA32N14A10 PDF File

Overview

SMCT TA32N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description This voltage controlled Solidtron (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid.
The VCS features the high peak current capability and low Onwww.
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com state voltage drop common to SCR thyristors combined with extremely high dI/dt capability.
This semiconductor is intended for the control of high power circuits with the use of very small amounts of input energy and is ideally suited for capacitor discharge applications.
The ThinPakTM Package is a perforated, metalized ceramic substrate attached to the silicon using 302oC solder.
An epoxy underfill is applied to protect the high voltage termination from debris.
All exterior metal surfaces are tinned with 63pb/37sn solder providing the user with a circuit ready part.
It's small size and low profile make it extremely attractive to high dI/dt applications where stray series inductance must be kept to a minimum.
Anode Bond Area Package Gate Return Bond Area Gate Bond Area Cathode Bond Area ThinPakTM Schematic Symbol Anode (A) Features l l l l 1400V Peak Off-State Voltage 32A Continuous Rating 4kA Surge Current Capability >100kA/uSec dI/dt Capability l l l l <100nSec Turn-On Delay Low On-State Voltage MOS Gated Control Low Inductance Package Gate (G) Gate Return (GR) Cathode (K) Absolute Maximum Ratings SYMBOL Peak Off-State Voltage Peak Reverse Voltage Off-State Rate of Change of Voltage Immunity Continuous Anode Current at 110oC Repetitive Peak Anode Current (Pulse Width=1uSec) Rate of Change of Current Continuous Gate-Cathode Voltage Peak Gate-Cathode Voltage Minimum Negative Gate-Cathode Voltage Required for Garanteed Off-State Maximum Junction Temperature Maximum Soldering Temperature (Installation) VDRM VRRM dv/dt IA110 IASM dI/dt VGKS VGKM VGK(OFF-MIN) TJM VALUE 1400 -5 5000 32 4000 150 +/-20 +/-25 -5 150 260 UNITS V V V/uSec A A kA/uSec V V V o o C C ...

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SMCTTA32N14A10 Advanced Pulse Power Device N-MOS VCS - Solidtron

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