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SMCTAA65N14A10

Solidtron
Part Number SMCTAA65N14A10
Manufacturer Solidtron
Description Power Management
Published May 22, 2009
Detailed Description SMCT AA65N14A10 Advanced Pulse Power Device N-MOS VCS, TO-247 Description This voltage controlled Solidtron (VCS) discha...
Datasheet PDF File SMCTAA65N14A10 PDF File

SMCTAA65N14A10
SMCTAA65N14A10

Overview
SMCT AA65N14A10 Advanced Pulse Power Device N-MOS VCS, TO-247 Description This voltage controlled Solidtron (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five leaded TO247 plastic package.
The VCS features the high peak current capability and low Onwww.
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com state voltage drop common to SCR thyristors combined with extremely high dI/dt capability.
This semiconductor is intended for the control of high power circuits with the use of very small amounts of input energy and is ideally suited for capacitor discharge applications.
The industry standard TO-247 package allows for assembly of the Solidtron using automated insertion equipment.
Package 1 5 Lead TO-247 Schematic Symbol Anode (A) Features l l l l 1400V Peak Off-State Voltage 65A Continuous Rating 6kA Surge Current Capability >100kA/uSec dI/dt Capability l l l l <150nSec Turn-On Delay Low On-State Voltage MOS Gated Control Low Inductance Package Gate (G) Gate Return (GR) Cathode (K) Absolute Maximum Ratings SYMBOL Peak Off-State Voltage Peak Reverse Voltage Off-State Rate of Change of Voltage Immunity Continuous Anode Current at 110 C Repetitive Peak Anode Current (Pulse Width=1uSec) Rate of Change of Current Continuous Gate-Cathode Voltage Peak Gate-Cathode Voltage Minimum Negative Gate-Cathode Voltage Required for Garanteed Off-State Maximum Junction Temperature Maximum Soldering Temperature (Installation) o VALUE 1400 -5 5000 65 6000 125 +/-20 +/-25 -5 150 260 UNITS V V V/uSec A A kA/uSec V V V o VDRM VRRM dv/dt IA110 IASM dI/dt VGKS VGKM VGK(OFF-MIN) TJM C C o This SILICON POWER product is protected by one or more of the following U.
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