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SMCTTA20N20A10

Solidtron
Part Number SMCTTA20N20A10
Manufacturer Solidtron
Description Power Management
Published May 22, 2009
Detailed Description SMCT TA20N20A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Preliminary Data Sheet Description This voltage control...
Datasheet PDF File SMCTTA20N20A10 PDF File

SMCTTA20N20A10
SMCTTA20N20A10

Overview
SMCT TA20N20A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Preliminary Data Sheet Description This voltage controlled Solidtron (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid.
The VCS features the high peak current capability and low Onwww.
datasheet4u.
com state voltage drop common to SCR thyristors combined with extremely high dI/dt capability.
This semiconductor is intended for the control of high power circuits with the use of very small amounts of input energy and is ideally suited for capacitor discharge applications.
The ThinPakTM Package is a perforated, metalized ceramic substrate attached to the silicon using 302oC solder.
An epoxy underfill is applied to protect the high voltage termination from debris.
All exterior metal surfaces are tinned with 63pb/37sn solder providing the user with a circuit ready part.
It's small size and low profile make it extremely attractive to high dI/dt applications where stray series inductance must be kept to a minimum.
Package Gate Return Bond Area Gate Bond Area Cathode Bond Area Anode Bond Area Opposite side ThinPakTM Anode (A) Schematic Symbol Features l l l l 2000V Peak Off-State Voltage 20A Continuous Rating 4kA Surge Current Capability High dI/dt Capability l l l Low On-State Voltage MOS Gated Control Low Inductance Package Gate (G) Gate Return (GR) Cathode (K) Absolute Maximum Ratings SYMBOL Peak Off-State Voltage Peak Reverse Voltage Off-State Rate of Change of Voltage Immunity Continuous Anode Current at 110 C Repetitive Peak Anode Current (Pulse Width=1uSec) Nonrepetitive Peak Anode Current (Pulse Width=250nSec) Rate of Change of Current Continuous Gate-Cathode Voltage Peak Gate-Cathode Voltage Minimum Negative Gate-Cathode Voltage Required for Garanteed Off-State Maximum Junction Temperature Maximum Soldering Temperature (Installation) o VALUE 2000 -5 1000 20 2000 4000 20 +/-20 +/-25 -5 150 260 UNITS V V V/uSec A A A kA/uSec V V ...


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