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LE28F4001CTS

Sanyo Semicon Device
Part Number LE28F4001CTS
Manufacturer Sanyo Semicon Device
Description 4M-Bit (512k 8) Flash EEPROM
Published Mar 22, 2005
Detailed Description Preliminary Specifications CMOS LSI LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM Features CMOS Flash EEPROM Technolo...
Datasheet PDF File LE28F4001CTS PDF File

LE28F4001CTS
LE28F4001CTS

Overview
Preliminary Specifications CMOS LSI LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max.
) Standby Current: 20 µA (Max.
) High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years Data Retention Latched Address and Data Self-timed Erase and Programming Byte Programming: 40µs (Max.
) End of Write Detection:Toggle Bit/ DATA Polling Hardware/Software Data Protection JEDEC Standard Byte-Wide EEPROM Pinouts Packages Available LE28F4001CTS: 32-pin TSOP Normal(8×14mm) Product Description The LE28F4001C is a 512K ×8 CMOS sector erase, byte program EEPROM.
The LE28F4001C is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology.
Breakthroughs in EEPROM cell design and process architecture attain better reliability and manufacturability compared with conve...


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