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APTGT25DA120D1

Advanced Power Technology
Part Number APTGT25DA120D1
Manufacturer Advanced Power Technology
Description Boost chopper Trench IGBT Power Module
Published May 26, 2009
Detailed Description APTGT25DA120D1 Trench IGBT Power Module 3 Boost chopper ® www.datasheet4u.com VCES = 1200V IC = 25A @ Tc = 80°C Appli...
Datasheet PDF File APTGT25DA120D1 PDF File

APTGT25DA120D1
APTGT25DA120D1

Overview
APTGT25DA120D1 Trench IGBT Power Module 3 Boost chopper ® www.
datasheet4u.
com VCES = 1200V IC = 25A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors • High level of integration Q2 6 7 1 2 3 4 5 7 6 2 1 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area TC = 25°C Tj = 125°C V W 50A@1200V These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1-3 APTGT25DA120D1 – Rev 0 January, 2004 TC = 25°C TC = 80°C TC = 25°C Max ratings 1200 40 25 65 ±20 140 Unit V A APTGT25DA120D1 All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic www.
datasheet4u.
com BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Electrical Characteristics Test Conditions VGE = 0V, IC = 4mA VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 25A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 6...


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