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PHP160NQ08T

NXP Semiconductors
Part Number PHP160NQ08T
Manufacturer NXP Semiconductors
Description N-channel TrenchMOS standard level FET
Published May 31, 2009
Detailed Description PHP/PHB160NQ08T N-channel TrenchMOS™ standard level FET Rev. 01 — 28 January 2004 www.datasheet4u.com Product data 1. ...
Datasheet PDF File PHP160NQ08T PDF File

PHP160NQ08T
PHP160NQ08T

Overview
PHP/PHB160NQ08T N-channel TrenchMOS™ standard level FET Rev.
01 — 28 January 2004 www.
datasheet4u.
com Product data 1.
Product profile 1.
1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.
1.
2 Features s Standard level threshold s Very low on-state resistance.
1.
3 Applications s Motors, lamps, solenoids s DC-to-DC converters s Uninterruptable power supplies s General industrial applications.
1.
4 Quick reference data s VDS ≤ 75 V s Ptot ≤ 300 W s ID ≤ 75 A s RDSon ≤ 5.
6 mΩ.
2.
Pinning information Table 1: 1 2 3 mb Pinning - SOT78 (TO-220AB) and SOT404 (D2-PAK), simplified outline and symbol Simplified outline [1] Pin Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol mb d mb g s MBB076 2 1 MBK106 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT404 package.
SOT404 (D2-PAK) Philips Semiconductors PHP/PHB160NQ08T N-channel TrenchMOS™ standard level FET 3.
Ordering information www.
datasheet4u.
com Table 2: Ordering information Package Name Description Version TO-220AB D2-PAK Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78 Plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404 Type number PHP160NQ08T PHB160NQ08T 4.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; tp = 0.
15 ms; VDD ≤ 75 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25...


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