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IRLSL4030PBF

Part Number	IRLSL4030PBF
Manufacturer	International Rectifier
Description	100V Single N-Channel HEXFET Power MOSFET
Published	May 31, 2009
Detailed Description	PD - 97370 Applications l DC Motor Drive www.datasheet4u.com l High Efficiency Synchronous Rectification in SMPS l Unin...
Datasheet	IRLSL4030PBF PDF File

Overview

PD - 97370 Applications l DC Motor Drive www.
datasheet4u.
com l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.
5V VGS l Superior R*Q at 4.
5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free IRLS4030PbF IRLSL4030PbF HEXFET® Power MOSFET D G S VDSS RDS(on) typ.
max.
ID 100V 3.
4mΩ 4.
3mΩ 180A G D S S D G TO-262 IRLSL4030bF D2Pak IRLS4030PbF G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Max.
180 130 730 370 2.
5 ± 16 21 -55 to + 175 300 Units A W W/°C V V/ns °C Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy f 305 See Fig.
14, 15, 22a, 22b mJ A mJ Thermal Resistance Symbol RθJC RθJA Parameter Junction-to-Case jk Junction-to-Ambient (PCB Mount) ij Typ.
––– ––– Max.
0.
40 40 Units °C/W www.
irf.
com 1 02/12/09 IRLS/SL4030PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
Typ.
Max.
Units 100 ––– ––– ––– 1.
0 ––– ––– ––– ––– ––– Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance www.
datasheet4u.
com VGS(th) IDSS IGSS RG(int) Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance ––– 0.
10 3.
4...

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IRLSL4030PBF 100V Single N-Channel HEXFET Power MOSFET - International Rectifier

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