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STB170NF04

ST Microelectronics
Part Number STB170NF04
Manufacturer ST Microelectronics
Description Power MOSFET
Published May 31, 2009
Detailed Description STB170NF04 www.datasheet4u.com N-channel 40 V, 4.4 mΩ , 80 A, D2PAK STripFET™ II Power MOSFET Features Type STB170NF04...
Datasheet PDF File STB170NF04 PDF File

STB170NF04
STB170NF04

Overview
STB170NF04 www.
datasheet4u.
com N-channel 40 V, 4.
4 mΩ , 80 A, D2PAK STripFET™ II Power MOSFET Features Type STB170NF04 ■ VDSS 40 V RDS(on) < 5 mΩ ID 80 A PTOT 300 W Standard threshold drive 3 1 Applications ■ Switching applications – Automotive D²PAK Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Figure 1.
Internal schematic diagram Table 1.
Device summary Marking B170NF04 Package D²PAK Packaging Tape and reel Part number STB170NF04 April 2009 Doc ID 15591 Rev 1 1/14 www.
st.
com 14 Contents STB170NF04 Contents 1 www.
datasheet4u.
com 2 Electrical ratings .
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3 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 4 5 6 Test circuits .
9 Package mechanical data .
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10 Packaging mechanical data .
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12 Revision history .
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13 2/14 Doc ID 15591 Rev 1 STB170NF04 Electrical ratings 1 www.
datasheet4u.
com Electrical ratings Table 2.
Symbol VDS VGS ID (1) ID (1) IDM (2) PTOT Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 40 ± 20 80 80 320 300 2 8 1.
5 -55 to 175 Unit V V A A A W W/°...


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