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LBCW68GLT1G

Part Number	LBCW68GLT1G
Manufacturer	Leshan Radio Company
Description	General Purpose Transistors
Published	Jun 2, 2009
Detailed Description	LESHAN RADIO COMPANY, LTD. www.datasheet4u.com General Purpose Transistors LBCW68GLT1G 3 1 2 PNP Silicon We declare t...
Datasheet	LBCW68GLT1G PDF File

Overview

LESHAN RADIO COMPANY, LTD.
www.
datasheet4u.
com General Purpose Transistors LBCW68GLT1G 3 1 2 PNP Silicon We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION Device LBCW68GLT1G LBCW68GLT3G Marking DG DG Shipping 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V V V CEO CBO EBO CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Value – 45 – 60 – 5.
0 – 800 Unit Vdc Vdc Vdc mAdc 1 BASE 3 COLLECTOR IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RθJA PD 556 300 2.
4 RθJA TJ , Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0 ) Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0 ) Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0) Collector Cutoff Current (VCE = –45 Vdc, I E= 0 ) (VCE = –45 Vdc, I B= 0 , TA = 150°C) Emitter Cutoff Current (VEB = – 4.
0 Vdc, I C = 0) 1.
FR– 5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina.
I EBO V (BR)CEO V (BR)CES V (BR)EBO – 45 – 60 – 5.
0 — — — — — — Vdc Vdc Vdc I CES — — — — — — – 20 – 10 – 20 nAdc µAdc nAdc 1/3 LESHAN RADIO COMPANY, LTD.
LBCW68GLT1G www.
datasheet4u.
com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE 120 160 60 V CE(sat) V BE(sat) — — — — — — — 400 — — – 1.
5 – 2.
0 Vdc Vdc Min Typ Max Unit — ON CHARACTERISTICS DC Current Gain ( IC= –10 mAdc, VCE = –1.
0 Vdc ) ( IC= –100 mAdc, VCE = –1.
0 Vdc ) ( IC= –300 m...

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LBCW68GLT1G General Purpose Transistors - Leshan Radio Company

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