DatasheetsPDF.com

BYV34G-600

NXP
Part Number BYV34G-600
Manufacturer NXP
Description Dual Rectifier Diode
Published Jun 3, 2009
Detailed Description BYV34G-600 Dual rectifier diode, ultrafast Rev. 01 — 25 February 2009 www.datasheet4u.com Product data sheet 1. Product...
Datasheet PDF File BYV34G-600 PDF File

BYV34G-600
BYV34G-600

Overview
BYV34G-600 Dual rectifier diode, ultrafast Rev.
01 — 25 February 2009 www.
datasheet4u.
com Product data sheet 1.
Product profile 1.
1 General description Ultrafast, dual common cathode, epitaxial rectifier diode in a SOT226 (I2PAK), low-profile plastic package.
1.
2 Features I Fast switching I Soft recovery characteristic I Low switching loss I Low thermal resistance I High thermal cycling performance I Low forward voltage drop 1.
3 Applications I Output rectifiers in high frequency switched-mode power supplies I Discontinuous Current Mode (DCM) Power Factor Correction (PFC) 1.
4 Quick reference data I VRRM ≤ 600 V I VF ≤ 1.
16 V I IO(AV) ≤ 20 A I trr ≤ 60 ns 2.
Pinning information Table 1.
Pin 1 2 3 mb Pinning Description anode 1 cathode anode 2 mounting base; cathode mb 1 2 sym084 Simplified outline Graphic symbol 3 1 2 3 SOT226 (I2PAK) NXP Semiconductors BYV34G-600 Dual rectifier diode, ultrafast 3.
Ordering information www.
datasheet4u.
com Table 2.
Ordering information Name Description plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB Version SOT226 Type number Package BYV34G-600 I2PAK 4.
Limiting values Table 3.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VRRM VRWM VR IO(AV) IFRM IFSM Tstg Tj Parameter repetitive peak reverse voltage crest working reverse voltage reverse voltage average output current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature DC; Tmb ≤ 138 °C square waveform; δ = 0.
5; Tmb ≤ 107 °C; both diodes conducting tp = 25 µs square waveform; δ = 0.
5; Tmb ≤ 107 °C; per diode tp = 10 ms; sinusoidal waveform; per diode tp = 8.
3 ms; sinusoidal waveform; per diode Conditions Min −40 Max 600 600 600 20 20 120 132 +150 150 Unit V V V A A A A °C °C BYV34G-600_1 © NXP B.
V.
2009.
All rights reserved.
Product data sheet Rev.
01 — 25 February 2009 2 of 9 NXP Semiconductors BYV34G-600 Dual rectifier diode, ultrafast 5.
Thermal cha...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)