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LET19060C

Part Number	LET19060C
Manufacturer	STMicroelectronics
Description	RF POWER TRANSISTORS Ldmos Enhanced Technology
Published	Mar 22, 2005
Detailed Description	LET19060C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-97...
Datasheet	LET19060C PDF File

Overview

LET19060C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-97 CDMA PERFORMANCES POUT = 7.
5 W EFF.
= 18 % • EDGE PERFORMANCES POUT = 30 W EFF.
= 25 % • GSM PERFORMANCES POUT = 65 W EFF.
= 45 % • EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE • INTERNAL INPUT/OUTPUT MATCHING • ESD PROTECTION PIN CONNECTION 1 M265 epoxy sealed ORDER CODE LET19060C BRANDING LET19060C DESCRIPTION The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.
0 GHz.
The LET19060C is designed for high gain and broadband performance operating in common source mode at 26 V.
Its internal matching makes it ideal for base station applications requiring high linearity.
2 3 1.
Drain 2.
Source 3.
Gate ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Po...

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LET19060C RF POWER TRANSISTORS Ldmos Enhanced Technology - STMicroelectronics

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