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LET21030C

STMicroelectronics
Part Number LET21030C
Manufacturer STMicroelectronics
Description RF POWER TRANSISTORS Ldmos Enhanced Technology
Published Mar 22, 2005
Detailed Description LET21030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 / WCDMA applicatio...
Datasheet PDF File LET21030C PDF File

LET21030C
LET21030C

Overview
LET21030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 / WCDMA applications • EXCELLENT THERMAL STABILITY • POUT = 30 W with 11 dB gain @ 2170 MHz • BeO FREE PACKAGE • INTERNAL INPUT MATCHING • ESD PROTECTION CASE 465E–03, STYLE 1 epoxy sealed ORDER CODE LET21030C BRANDING LET21030C DESCRIPTION The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.
1 GHz.
The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V.
Its internal matching makes it ideal for base station applications requiring high linearity.
PIN CONNECTION 1 3 2 1.
Drain 2.
Gate 3.
Source ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 °C) Max.
Operating Junction Temperature Storage Temperature Parameter Value 65 -0.
5 to +15 4 65 200 -65 to +200 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 2 °C/W January, 24 2003 1/4 LET21030C ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS* COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V ID = 20 µA VDS = 26 V VDS = 0 V ID = TBD ID = 1 A ID = 1 A VDD = 26 V VDD = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz 2 0.
29 2 TBD TBD TBD Test Conditions Min.
65 1 1 4.
5 0.
4 Typ.
Max.
Unit V µA µA V V mho pF pF pF * Including input matching capacitor in package ? Symbol Test Conditions Min.
Typ.
Max.
Unit DYNAMIC (f = 2170 MHz) POUT(1) ηD (1) VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD 30 45 35 50 10:1 W % VSWR Load mismatch VDD = 26 V POUT = 30 W ALL PHASE ANGLES DYNAMIC (f = 2110 - 2170 MHz) POUT(1) ηD (1) VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD mA POU...


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