DatasheetsPDF.com

LET8180

Part Number	LET8180
Manufacturer	STMicroelectronics
Description	RF POWER TRANSISTORS Ldmos Enhanced Technology
Published	Mar 22, 2005
Detailed Description	LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELL...
Datasheet	LET8180 PDF File

Overview

LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 220 W with 17 dB TYP.
gain @ 860 MHz • BeO FREE PACKAGE • INTERNAL INPUT MATCHING • ESD PROTECTION ORDER CODE LET8180 M252 epoxy sealed BRANDING LET8180 DESCRIPTION The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.
0 GHz.
The LET8180 is designed for high gain and broadband performance operating in common source mode at 32 V.
Its internal matching makes it ideal for base ...

Similar Datasheet

LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology - STMicroelectronics

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)