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SUP18N15-95

Vishay Siliconix
Part Number SUP18N15-95
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Jun 6, 2009
Detailed Description SUP18N15-95 New Product Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET www.datasheet4u.com FEATURES rDS(on) (W) ...
Datasheet PDF File SUP18N15-95 PDF File

SUP18N15-95
SUP18N15-95


Overview
SUP18N15-95 New Product Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET www.
datasheet4u.
com FEATURES rDS(on) (W) 0.
095 @ VGS = 10 V PRODUCT SUMMARY VDS (V) 150 ID (A) 18 17.
5 D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D 42-V Automotive Bus 0.
100 @ VGS = 6 V TO-220AB D G DRAIN connected to TAB G D S Top View S N-Channel MOSFET SUP18N15-95 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa L = 0.
1 mH TC = 25_C TC = 25_C TC = 125_C ID IDM IAR EAR PD TJ, Tstg Symbol VDS VGS Limit 150 "20 18 10.
3 25 15 16.
2 88b –55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (Free Air) Junction-to-Case Notes a.
Duty cycle v 1%.
b.
See SOA curve for voltage derating.
Document Number: 71642 S-04093—Rev.
A, 25-Jun-01 www.
vishay.
com Symbol RthJA RthJC Limit 85 1.
7 Unit _C/W 1 SUP18N15-95 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) www.
datasheet4u.
com Parameter Symbol Test Condition Min Typa Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 120 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 120 V, VGS = 0 V, TJ = 125_C VDS = 120 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Resistanceb VGS = 10 V, ID = 15 A, TJ = 125_C rDS(on) VGS = 10 V, ID = 15 A, TJ = 175_C VGS = 6 V, ID = 10 A Forward Transconductanceb gfs VDS = 15 V, ID = 15 A 0.
081 25 25 0.
077 0.
095 0.
190 0.
250 0.
100 S W 150 V 2 "100 1 50 250 A mA nA Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate...


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