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NM29N16

Part Number	NM29N16
Manufacturer	National Semiconductor
Description	16 MBit (2M x 8 Bit) CMOS NAND FLASH E2PROM
Published	Jun 8, 2009
Detailed Description	NM29N16 16 MBit (2M x 8 Bit) CMOS NAND FLASH E2PROM February 1996 NM29N16 www.datasheet4u.com 16 MBit (2M x 8 Bit) CMO...
Datasheet	NM29N16 PDF File

Overview

NM29N16 16 MBit (2M x 8 Bit) CMOS NAND FLASH E2PROM February 1996 NM29N16 www.
datasheet4u.
com 16 MBit (2M x 8 Bit) CMOS NAND FLASH E2PROM General Description The NM29N16 is a 16 Mbit (2 Mbyte) NAND FLASH The device is organized as an array of 512 blocks each consisting of 16 pages Each page contains 264 bytes All commands and data are sent through eight I O pins To read data a page is first transferred out of the array to an on-chip buffer Sending successive read pulses (RE low) reads out successive bytes of data The erase operation is implemented in either a single block (4 kbytes) or on multiple blocks at the same time Programming the device requires sending address and data information to the on-board buffer and then issuing the program command Typical program time for 264 bytes is 400 ms All erase and program operations are internally timed The NM29N16 incorporates a number of features that make it ideal for portable applications requiring high density storage These features include single 5V operation high read write endurance (250k cycle) and low current operation (15 mA during reads) The device comes in a TSOP Type II package which meets the requirements of PCMCIA cards The NM29N16 is suited for numerous applications such as Solid State Drives (SSD) Audio Recording and Image Storage for digital cameras Features Y Y Y Y Y Y Y Y Y Single 5V g 10% power supply Write Erase endurance of 250 000 cycles target of 1 000 000 cycles Fast Erase Program Times Average Program Time of 400 ms 264 bytes Typical Block Erase Time of 6 ms Organized as 512 blocks each consisting of 16 pages of 264 bytes Read Program in pages of 264 bytes Erase in Blocks of 4 kbytes High Performance Read Access times Initial 25 ms page transfer Sequential 80 ns access Low Operating Current (typical) Typical Read current of 15 mA Typical Program current of 40 mA Typical Erase current of 20 mA Standby current less than 100 mA (CMOS) Command Register for Mode Control Read Reset Auto Page P...

Similar Datasheet

NM29N16 16 MBit (2M x 8 Bit) CMOS NAND FLASH E2PROM - National Semiconductor

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