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IXTQ140N10P

IXYS Corporation
Part Number IXTQ140N10P
Manufacturer IXYS Corporation
Description Power MOSFET
Published Jun 8, 2009
Detailed Description PolarHTTM Power MOSFET www.datasheet4u.com IXTQ 140N10P IXTT 140N10P VDSS ID25 RDS(on) = = ≤ 100 V 140 A 11 mΩ N-C...
Datasheet PDF File IXTQ140N10P PDF File

IXTQ140N10P
IXTQ140N10P

Overview
PolarHTTM Power MOSFET www.
datasheet4u.
com IXTQ 140N10P IXTT 140N10P VDSS ID25 RDS(on) = = ≤ 100 V 140 A 11 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C Maximum Ratings 100 100 ±20 ±30 140 75 300 60 80 2.
5 10 600 -55 .
.
.
+175 175 -55 .
.
.
+150 V V V V A A A A mJ J V/ns W °C °C °C °C °C G = Gate S = Source G S D = Drain T...


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