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IXTT140N10P

IXYS Corporation
Part Number IXTT140N10P
Manufacturer IXYS Corporation
Description Power MOSFET
Published Jun 8, 2009
Detailed Description PolarHTTM Power MOSFET www.datasheet4u.com IXTQ 140N10P IXTT 140N10P VDSS ID25 RDS(on) = = ≤ 100 V 140 A 11 mΩ N-C...
Datasheet PDF File IXTT140N10P PDF File

IXTT140N10P
IXTT140N10P


Overview
PolarHTTM Power MOSFET www.
datasheet4u.
com IXTQ 140N10P IXTT 140N10P VDSS ID25 RDS(on) = = ≤ 100 V 140 A 11 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C Maximum Ratings 100 100 ±20 ±30 140 75 300 60 80 2.
5 10 600 -55 .
.
.
+175 175 -55 .
.
.
+150 V V V V A A A A mJ J V/ns W °C °C °C °C °C G = Gate S = Source G S D = Drain TAB = Drain D (TAB) TO-3P (IXTQ) G D S (TAB) TO-268 (IXTT) 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque TO-3P TO-268 (TO-3P) 300 260 Features l l 1.
13/10 Nm/lb.
in.
5.
5 5.
0 g g l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175° C Characteristic Values Min.
Typ.
Max.
100 3.
0 5.
0 ±100 25 500 11 9 V V nA µA µA mΩ mΩ Advantages l l l Easy to mount Space savings High power density VGS = 10 V, ID = 0.
5 ID25 VGS = 15 V, ID = 300 A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved DS99133E(12/05) IXTQ 140N10P IXTT 140N10P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min.
Typ.
Max.
45 65 4700 1850 600 35 VGS = 10 V, VDS = 0.
5 VDSS, ID = 60 A RG = 4 Ω (External) 50 85 26 155 VGS= 10 V, VDS = 0.
5 VDSS, ID = 0.
5 ID25 33 85 S pF pF pF ns ns ns ns nC nC nC 0.
25° C/W (TO-3P) 0.
21 ° C/W TO-3P (IXTQ) Outline gfs Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS= 10 V; ID = 0.
5 ID25, pulse test VGS = 0 ...



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