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MRF9080LSR3

Part Number	MRF9080LSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Jun 10, 2009
Detailed Description	Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancemen...
Datasheet	MRF9080LSR3 PDF File

Overview

Freescale Semiconductor Technical Data MRF9080 Rev.
5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large −signal, common − www.
datasheet4u.
com source amplifier applications in 26 volt base station equipment.
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.
5 dB Efficiency @ P1db: 55% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large−Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads.
L Suffix Indicates 40µ″ Nominal.
• In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9080LR3 MRF9080LSR3 GSM 900 MHz FREQUENCY BAND, 75 W, 26 V LATERAL N−CHANNEL RF POWER MOSFETs CASE 465−06, STYLE 1 NI−780 MRF9080LR3 CASE 465A−06, STYLE 1 NI−780S MRF9080LSR3 Table 1.
Maximum Ratings Rating Drain−Source Voltage Gate−Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value − 0.
5, +65 − 0.
5, +15 250 1.
43 − 65 to +150 200 Unit Vdc Vdc W W/°C °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.
7 Unit °C/W Table 3.
ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
© Freescale Semiconductor, Inc.
, 2004.
All rights reserved.
MRF9080LR3 MRF9080LSR3 5−1 ...

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