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MRF19030LSR3

Part Number	MRF19030LSR3
Manufacturer	Motorola
Description	The RF MOSFET Line RF Power Field Effect Transistors
Published	Jun 10, 2009
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF19030/D The RF MOSFET ...
Datasheet	MRF19030LSR3 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF19030/D The RF MOSFET Line RF Power Field Effect Transistors Designed for class AB PCN and PCS base station applications with www.
datasheet4u.
com frequencies from 1.
8 to 2.
0 GHz.
Suitable for FM, TDMA, CDMA and N - Channel Enhancement - Mode Lateral MOSFETs multicarrier amplifier applications.
• CDMA Performance @ 1990 MHz, 26 Volts IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz — - 47 dBc @ 30 kHz BW 1.
25 MHz — - 55 dBc @ 12.
5 kHz BW 2.
25 MHz — - 55 dBc @ 1 MHz BW Output Power — 4.
5 Watts Avg.
Power Gain — 13.
5 dB Efficiency — 17% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.
93 GHz, 30 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel.
R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF19030LR3 MRF19030LSR3 2.
0 GHz, 30 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc.
.
.
CASE 465E - 04, STYLE 1 NI - 400 MRF19030LR3 CASE 465F - 04, STYLE 1 NI - 400S MRF19030LSR3 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.
5, +15 83.
3 0.
48 - 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 2.
1 Unit °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devi...

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