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MRF19030SR3

Part Number	MRF19030SR3
Manufacturer	Motorola
Description	RF POWER FIELD EFFECT TRANSISTORS
Published	Jun 10, 2009
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19030/D The RF MOSFET Line RF Power Field Effect Tra...
Datasheet	MRF19030SR3 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19030/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with f r e quencies from 1.
8 to 2.
0 GHz.
Suitable for FM, TDMA, CDMA and www.
datasheet4u.
com multicarrier amplifier applications.
• CDMA Performance @ 1990 MHz, 26 Volts IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz — –47 dBc @ 30 kHz BW 1.
25 MHz — –55 dBc @ 12.
5 kHz BW 2.
25 MHz — –55 dBc @ 1 MHz BW Output Power — 4.
5 Watts Avg.
Power Gain — 13.
5 dB Efficiency — 17% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.
93 GHz, 30 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • In Tape and Reel.
R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF19030R3 MRF19030SR3 2.
0 GHz, 30 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465E–03, STYLE 1 NI–400 MRF19030R3 CASE 465F–03, STYLE 1 NI–400S MRF19030SR3 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.
5, +15 83.
3 0.
48 –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.
1 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 7 MOTOROLA RF DEVICE DATA  Motorola, Inc.
2002 MRF19030R3 MRF19030SR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unles...

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