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MRF6S18060MR1

Freescale Semiconductor
Part Number MRF6S18060MR1
Manufacturer Freescale Semiconductor
Description RF Power Field Effect Transistors
Published Jun 10, 2009
Detailed Description Freescale Semiconductor Technical Data Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with t...
Datasheet PDF File MRF6S18060MR1 PDF File

MRF6S18060MR1
MRF6S18060MR1

Overview
Freescale Semiconductor Technical Data Replaced by MRF6S18060NR1/NBR1.
There are no form, fit or function changes with this part replacement.
N suffix added to part number to indicate transition to lead - free terminations.
Document Number: MRF6S18060 Rev.
2, 5/2006 RF Power Field Effect Transistors www.
datasheet4u.
com MRF6S18060MR1 MRF6S18060MBR1 1800 - 2000 MHz, 60 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz.
Suitable for TDMA, CDMA, and multicarrier amplifier applications.
ARCHIVE INFORMATION CASE 1486 - 03, STYLE 1 TO - 270 WB -...


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