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MRF6S19200HR3

Part Number	MRF6S19200HR3
Manufacturer	Freescale Semiconductor
Description	RF Power Transistors
Published	Jun 10, 2009
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors ...
Datasheet	MRF6S19200HR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev.
0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.
Suitable for CDMA and multicarrier amplifier applications.
To be used in Class AB and Class C for PCN - PCS/cellular radio applications.
www.
datasheet4u.
com • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 56 Watts Avg.
, Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 17.
9 dB Drain Efficiency ...

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