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PD20010-E

Part Number	PD20010-E
Manufacturer	ST Microelectronics
Description	RF Power Transistor
Published	Jun 10, 2009
Detailed Description	PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs www.datasheet4u.com Fea...
Datasheet	PD20010-E PDF File

Overview

PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs www.
datasheet4u.
com Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.
6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.
It is designed for high gain, broadband commercial and industrial applications.
It operates at 13.
6 V in common source mode at frequencies of up to 1 GHz.
PD20010-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.
PD20010-E’s superior linearity performance makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD packag...

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PD20010-E RF Power Transistor - ST Microelectronics

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